Abstract
We have grown epitaxial YBa2Cu3O7 films on GaAs using MgO buffer layers similar to Fork, Nashimoto, and Geballe [Appl. Phys. Lett. 60, 1621 (1992)]. However, the YBa2Cu3O 7 was deposited by thermal coevaporation at an even lower substrate temperature of 620°C. We obtained substantially improved quality [T c=86.8 K, jc(77 K)=1.2×106 A/cm 2, ρ(100 K)≤100 μΩ cm] and smooth surfaces free of outgrowth. An important aspect is preventing As contamination from the gas phase. This was achieved by encapsulating the free sample surface.
Original language | English |
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Pages (from-to) | 1841-1843 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 15 |
DOIs | |
State | Published - 1992 |