Epitaxial growth of YBa2Cu3O7 films on GaAs with MgO buffer layers

W. Prusseit, S. Corsépius, F. Baudenbacher, K. Hirata, P. Berberich, H. Kinder

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We have grown epitaxial YBa2Cu3O7 films on GaAs using MgO buffer layers similar to Fork, Nashimoto, and Geballe [Appl. Phys. Lett. 60, 1621 (1992)]. However, the YBa2Cu3O 7 was deposited by thermal coevaporation at an even lower substrate temperature of 620°C. We obtained substantially improved quality [T c=86.8 K, jc(77 K)=1.2×106 A/cm 2, ρ(100 K)≤100 μΩ cm] and smooth surfaces free of outgrowth. An important aspect is preventing As contamination from the gas phase. This was achieved by encapsulating the free sample surface.

Original languageEnglish
Pages (from-to)1841-1843
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number15
DOIs
StatePublished - 1992

Fingerprint

Dive into the research topics of 'Epitaxial growth of YBa2Cu3O7 films on GaAs with MgO buffer layers'. Together they form a unique fingerprint.

Cite this