Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

Joachim Hubmann; Benedikt Bauer; Helmut S. Körner; Stephan Furthmeier; Martin Buchner; Günther Bayreuther; Florian Dirnberger; Dieter Schuh; Christian H. Back; Josef Zweck; Elisabeth Reiger; Dominique Bougeard

doi:10.1021/acs.nanolett.5b03658

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

Joachim Hubmann
, Benedikt Bauer
, Helmut S. Körner
, Stephan Furthmeier
, Martin Buchner
, Günther Bayreuther
, Florian Dirnberger
, Dieter Schuh
, Christian H. Back
, Josef Zweck
, Elisabeth Reiger
, Dominique Bougeard

University of Regensburg

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

Original language	English
Pages (from-to)	900-905
Number of pages	6
Journal	Nano Letters
Volume	16
Issue number	2
DOIs	https://doi.org/10.1021/acs.nanolett.5b03658
State	Published - 10 Feb 2016
Externally published	Yes

Keywords

GaAs nanowire
MnAs segment
deterministic epitaxial growth
room-temperature ferromagnet
sequential crystallization
single-domain

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10.1021/acs.nanolett.5b03658

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title = "Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization",

abstract = "We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.",

keywords = "GaAs nanowire, MnAs segment, deterministic epitaxial growth, room-temperature ferromagnet, sequential crystallization, single-domain",

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doi = "10.1021/acs.nanolett.5b03658",

language = "English",

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T1 - Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

AU - Hubmann, Joachim

AU - Bauer, Benedikt

AU - Körner, Helmut S.

AU - Furthmeier, Stephan

AU - Buchner, Martin

AU - Bayreuther, Günther

AU - Dirnberger, Florian

AU - Schuh, Dieter

AU - Back, Christian H.

AU - Zweck, Josef

AU - Reiger, Elisabeth

AU - Bougeard, Dominique

PY - 2016/2/10

Y1 - 2016/2/10

N2 - We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

AB - We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

KW - GaAs nanowire

KW - MnAs segment

KW - deterministic epitaxial growth

KW - room-temperature ferromagnet

KW - sequential crystallization

KW - single-domain

UR - https://www.scopus.com/pages/publications/84958176070

U2 - 10.1021/acs.nanolett.5b03658

DO - 10.1021/acs.nanolett.5b03658

M3 - Article

AN - SCOPUS:84958176070

SN - 1530-6984

VL - 16

SP - 900

EP - 905

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

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Keywords

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