Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

Joachim Hubmann; Benedikt Bauer; Helmut S. Körner; Stephan Furthmeier; Martin Buchner; Günther Bayreuther; Florian Dirnberger; Dieter Schuh; Christian H. Back; Josef Zweck; Elisabeth Reiger; Dominique Bougeard

doi:10.1021/acs.nanolett.5b03658

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

Joachim Hubmann, Benedikt Bauer, Helmut S. Körner, Stephan Furthmeier, Martin Buchner, Günther Bayreuther, Florian Dirnberger, Dieter Schuh, Christian H. Back, Josef Zweck, Elisabeth Reiger, Dominique Bougeard

University of Regensburg

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

Original language	English
Pages (from-to)	900-905
Number of pages	6
Journal	Nano Letters
Volume	16
Issue number	2
DOIs	https://doi.org/10.1021/acs.nanolett.5b03658
State	Published - 10 Feb 2016
Externally published	Yes

Keywords

GaAs nanowire
MnAs segment
deterministic epitaxial growth
room-temperature ferromagnet
sequential crystallization
single-domain

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10.1021/acs.nanolett.5b03658

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title = "Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization",

abstract = "We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.",

keywords = "GaAs nanowire, MnAs segment, deterministic epitaxial growth, room-temperature ferromagnet, sequential crystallization, single-domain",

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T1 - Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

AU - Hubmann, Joachim

AU - Bauer, Benedikt

AU - Körner, Helmut S.

AU - Furthmeier, Stephan

AU - Buchner, Martin

AU - Bayreuther, Günther

AU - Dirnberger, Florian

AU - Schuh, Dieter

AU - Back, Christian H.

AU - Zweck, Josef

AU - Reiger, Elisabeth

AU - Bougeard, Dominique

PY - 2016/2/10

Y1 - 2016/2/10

N2 - We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

AB - We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.

KW - GaAs nanowire

KW - MnAs segment

KW - deterministic epitaxial growth

KW - room-temperature ferromagnet

KW - sequential crystallization

KW - single-domain

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JO - Nano Letters

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IS - 2

ER -

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

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Keywords

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