Epitaxial growth of phosphorus doped diamond on {111} substrate

N. Casanova; A. Tajani; E. Gheeraert; E. Bustarret; J. A. Garrido; C. E. Nebel; M. Stutzmann

doi:10.1016/S0925-9635(02)00012-2

Epitaxial growth of phosphorus doped diamond on {111} substrate

N. Casanova, A. Tajani, E. Gheeraert, E. Bustarret, J. A. Garrido, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A set of phosphorus doped CVD diamond films with various doping levels were grown epitaxially on {111} surfaces of synthetic type Ib diamond crystals and analysed by infrared absorption spectroscopy. Infrared absorption spectra clearly indicated the presence of neutral substitutional phosphorus in the samples. Two peaks located at 523 and 562 meV, corresponding to the electronic transitions from the phosphorus ground level IS to the first and second excited states 2P₀ and 2P_+/- respectively, are present in the infrared spectra. Resistivity measurements were also performed to calculate the activation energy. All results (infrared spectra, activation energy, hopping conduction and photoconductivity) seem to indicate an n-type doping of the films. However, due to the high resistivity it was not possible to carry out Hall measurements.

Original language	English
Pages (from-to)	328-331
Number of pages	4
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(02)00012-2
State	Published - Mar 2002

Keywords

Characterisation IR
Diamond
Growth
n-Type doping

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10.1016/S0925-9635(02)00012-2

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title = "Epitaxial growth of phosphorus doped diamond on \{111\} substrate",

abstract = "A set of phosphorus doped CVD diamond films with various doping levels were grown epitaxially on \{111\} surfaces of synthetic type Ib diamond crystals and analysed by infrared absorption spectroscopy. Infrared absorption spectra clearly indicated the presence of neutral substitutional phosphorus in the samples. Two peaks located at 523 and 562 meV, corresponding to the electronic transitions from the phosphorus ground level IS to the first and second excited states 2P0 and 2P+/- respectively, are present in the infrared spectra. Resistivity measurements were also performed to calculate the activation energy. All results (infrared spectra, activation energy, hopping conduction and photoconductivity) seem to indicate an n-type doping of the films. However, due to the high resistivity it was not possible to carry out Hall measurements.",

keywords = "Characterisation IR, Diamond, Growth, n-Type doping",

author = "N. Casanova and A. Tajani and E. Gheeraert and E. Bustarret and Garrido, \{J. A.\} and Nebel, \{C. E.\} and M. Stutzmann",

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TY - JOUR

T1 - Epitaxial growth of phosphorus doped diamond on {111} substrate

AU - Casanova, N.

AU - Tajani, A.

AU - Gheeraert, E.

AU - Bustarret, E.

AU - Garrido, J. A.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 2002/3

Y1 - 2002/3

N2 - A set of phosphorus doped CVD diamond films with various doping levels were grown epitaxially on {111} surfaces of synthetic type Ib diamond crystals and analysed by infrared absorption spectroscopy. Infrared absorption spectra clearly indicated the presence of neutral substitutional phosphorus in the samples. Two peaks located at 523 and 562 meV, corresponding to the electronic transitions from the phosphorus ground level IS to the first and second excited states 2P0 and 2P+/- respectively, are present in the infrared spectra. Resistivity measurements were also performed to calculate the activation energy. All results (infrared spectra, activation energy, hopping conduction and photoconductivity) seem to indicate an n-type doping of the films. However, due to the high resistivity it was not possible to carry out Hall measurements.

AB - A set of phosphorus doped CVD diamond films with various doping levels were grown epitaxially on {111} surfaces of synthetic type Ib diamond crystals and analysed by infrared absorption spectroscopy. Infrared absorption spectra clearly indicated the presence of neutral substitutional phosphorus in the samples. Two peaks located at 523 and 562 meV, corresponding to the electronic transitions from the phosphorus ground level IS to the first and second excited states 2P0 and 2P+/- respectively, are present in the infrared spectra. Resistivity measurements were also performed to calculate the activation energy. All results (infrared spectra, activation energy, hopping conduction and photoconductivity) seem to indicate an n-type doping of the films. However, due to the high resistivity it was not possible to carry out Hall measurements.

KW - Characterisation IR

KW - Diamond

KW - Growth

KW - n-Type doping

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U2 - 10.1016/S0925-9635(02)00012-2

DO - 10.1016/S0925-9635(02)00012-2

M3 - Article

AN - SCOPUS:0036508106

SN - 0925-9635

VL - 11

SP - 328

EP - 331

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

Epitaxial growth of phosphorus doped diamond on {111} substrate

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Keywords

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