Enhanced Zener tunneling in silicon

Aldo Di Carlo, Paolo Lugli, Peter Vogl

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. Even though Zener tunneling is essentially a k-conserving process, we are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. A realistic example is presented for SiGe-modulated diodes.

Original languageEnglish
Pages (from-to)921-923
Number of pages3
JournalSolid State Communications
Volume101
Issue number12
DOIs
StatePublished - Mar 1997

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