Enhanced Tuning Efficiency in Tunable Laser Diodes Using Type-II Superlattices

G. Rösel, T. Jacke, M. Grau, R. Meyer, M. C. Amann

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We propose a type-II AlGaAsSb-AlGaInAs heterostructure superlattice for improved electronically tunable laser diodes exploiting the free-carrier plasma effect. In electronically tunable laser diodes, commonly type-I heterostructure diodes (e.g., GalnAsP-InP) are used as tuning region; however, at equal tuning, the type-II heterostructure superlattices provide the advantage of significantly smaller recombination rates due to the spatial separation of electrons and holes. As a consequence, the required tuning currents can be reduced and the maximum achievable carrier density in an optimized type-II diode can be enhanced by about a factor of two.

Original languageEnglish
Pages (from-to)738-740
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number3
StatePublished - Mar 2004


  • Charge carrier lifetime
  • Semiconductor lasers
  • Semiconductor superlattices
  • Tuning


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