Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

A. Lemaître; A. D. Ashmore; J. J. Finley; D. J. Mowbray; M. S. Skolnick; M. Hopkinson; T. F. Krauss

doi:10.1103/PhysRevB.63.161309

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

A. Lemaître, A. D. Ashmore, J. J. Finley, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, T. F. Krauss

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102 Scopus citations

Abstract

Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes in absorption is also presented.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.63.161309
State	Published - 2001
Externally published	Yes

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@article{1d63df7475ae42b18eb90006446575cd,

title = "Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots",

abstract = "Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes in absorption is also presented.",

author = "A. Lema{\^i}tre and Ashmore, {A. D.} and Finley, {J. J.} and Mowbray, {D. J.} and Skolnick, {M. S.} and M. Hopkinson and Krauss, {T. F.}",

year = "2001",

doi = "10.1103/PhysRevB.63.161309",

language = "English",

volume = "63",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

AU - Lemaître, A.

AU - Ashmore, A. D.

AU - Finley, J. J.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Hopkinson, M.

AU - Krauss, T. F.

PY - 2001

Y1 - 2001

N2 - Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes in absorption is also presented.

AB - Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes in absorption is also presented.

UR - http://www.scopus.com/inward/record.url?scp=0034879440&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.63.161309

DO - 10.1103/PhysRevB.63.161309

M3 - Article

AN - SCOPUS:0034879440

SN - 1098-0121

VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

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