Enhanced coherent Zener tunneling in indirect gap semiconductors

A. Di Carlo, P. Lugli, A. Kavokin, M. Vladimirova, P. Vogl

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. We are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. Evidence of such phenomena have also been obtained in the absorption coefficient for a band gap modulated PIN diode. A realistic example is presented for SiCe-modulated diodes.

Original languageEnglish
Pages (from-to)420-422
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Nov 1997
Externally publishedYes


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