Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2

Julian Klein, Lukas Sigl, Samuel Gyger, Katja Barthelmi, Matthias Florian, Sergio Rey, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Christoph Kastl, Val Zwiller, Klaus D. Jöns, Kai Müller, Ursula Wurstbauer, Jonathan J. Finley, Alexander W. Holleitner

Research output: Contribution to journalArticlepeer-review

50 Scopus citations


We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show antibunching behavior with a g2(0) ∼0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

Original languageEnglish
Pages (from-to)669-677
Number of pages9
JournalACS Photonics
Issue number2
StatePublished - 17 Feb 2021


  • 2D materials
  • He-ion irradiation
  • defect generation
  • molybdenum disulfide
  • quantum emitter
  • vdW heterostructure


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