Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2

Julian Klein; Lukas Sigl; Samuel Gyger; Katja Barthelmi; Matthias Florian; Sergio Rey; Takashi Taniguchi; Kenji Watanabe; Frank Jahnke; Christoph Kastl; Val Zwiller; Klaus D. Jöns; Kai Müller; Ursula Wurstbauer; Jonathan J. Finley; Alexander W. Holleitner

doi:10.1021/acsphotonics.0c01907

Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS₂

Julian Klein, Lukas Sigl, Samuel Gyger, Katja Barthelmi, Matthias Florian, Sergio Rey, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Christoph Kastl, Val Zwiller, Klaus D. Jöns, Kai Müller, Ursula Wurstbauer, Jonathan J. Finley, Alexander W. Holleitner

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69 Scopus citations

Abstract

We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show antibunching behavior with a g2(0) ∼0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

Original language	English
Pages (from-to)	669-677
Number of pages	9
Journal	ACS Photonics
Volume	8
Issue number	2
DOIs	https://doi.org/10.1021/acsphotonics.0c01907
State	Published - 17 Feb 2021

Keywords

2D materials
He-ion irradiation
defect generation
molybdenum disulfide
quantum emitter
vdW heterostructure

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10.1021/acsphotonics.0c01907

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Klein, J., Sigl, L., Gyger, S., Barthelmi, K., Florian, M., Rey, S., Taniguchi, T., Watanabe, K., Jahnke, F., Kastl, C., Zwiller, V., Jöns, K. D., Müller, K., Wurstbauer, U., Finley, J. J., & Holleitner, A. W. (2021). Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS₂. ACS Photonics, 8(2), 669-677. https://doi.org/10.1021/acsphotonics.0c01907

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title = "Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2",

abstract = "We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show antibunching behavior with a g2(0) ∼0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.",

keywords = "2D materials, He-ion irradiation, defect generation, molybdenum disulfide, quantum emitter, vdW heterostructure",

author = "Julian Klein and Lukas Sigl and Samuel Gyger and Katja Barthelmi and Matthias Florian and Sergio Rey and Takashi Taniguchi and Kenji Watanabe and Frank Jahnke and Christoph Kastl and Val Zwiller and J{\"o}ns, {Klaus D.} and Kai M{\"u}ller and Ursula Wurstbauer and Finley, {Jonathan J.} and Holleitner, {Alexander W.}",

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year = "2021",

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doi = "10.1021/acsphotonics.0c01907",

language = "English",

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Klein, J, Sigl, L, Gyger, S, Barthelmi, K, Florian, M, Rey, S, Taniguchi, T, Watanabe, K, Jahnke, F, Kastl, C, Zwiller, V, Jöns, KD, Müller, K, Wurstbauer, U, Finley, JJ & Holleitner, AW 2021, 'Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS₂', ACS Photonics, vol. 8, no. 2, pp. 669-677. https://doi.org/10.1021/acsphotonics.0c01907

TY - JOUR

T1 - Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2

AU - Klein, Julian

AU - Sigl, Lukas

AU - Gyger, Samuel

AU - Barthelmi, Katja

AU - Florian, Matthias

AU - Rey, Sergio

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Jahnke, Frank

AU - Kastl, Christoph

AU - Zwiller, Val

AU - Jöns, Klaus D.

AU - Müller, Kai

AU - Wurstbauer, Ursula

AU - Finley, Jonathan J.

AU - Holleitner, Alexander W.

PY - 2021/2/17

Y1 - 2021/2/17

N2 - We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show antibunching behavior with a g2(0) ∼0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

AB - We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show antibunching behavior with a g2(0) ∼0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

KW - 2D materials

KW - He-ion irradiation

KW - defect generation

KW - molybdenum disulfide

KW - quantum emitter

KW - vdW heterostructure

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U2 - 10.1021/acsphotonics.0c01907

DO - 10.1021/acsphotonics.0c01907

M3 - Article

AN - SCOPUS:85100246008

SN - 2330-4022

VL - 8

SP - 669

EP - 677

JO - ACS Photonics

JF - ACS Photonics

IS - 2

ER -

Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS₂

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