Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

C. Grasse; G. Boehm; M. Mueller; T. Gruendl; R. Meyer; M. C. Amann

doi:10.1088/0268-1242/25/4/045018

Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

C. Grasse
, G. Boehm
, M. Mueller
, T. Gruendl
, R. Meyer
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

Original language	English
Article number	045018
Journal	Semiconductor Science and Technology
Volume	25
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/25/4/045018
State	Published - 2010

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abstract = "A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.",

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AU - Grasse, C.

AU - Boehm, G.

AU - Mueller, M.

AU - Gruendl, T.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2010

Y1 - 2010

N2 - A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

AB - A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

UR - https://www.scopus.com/pages/publications/77951083453

U2 - 10.1088/0268-1242/25/4/045018

DO - 10.1088/0268-1242/25/4/045018

M3 - Article

AN - SCOPUS:77951083453

SN - 0268-1242

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045018

ER -

Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

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