Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

C. Grasse; G. Boehm; M. Mueller; T. Gruendl; R. Meyer; M. C. Amann

doi:10.1088/0268-1242/25/4/045018

Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

C. Grasse, G. Boehm, M. Mueller, T. Gruendl, R. Meyer, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

Original language	English
Article number	045018
Journal	Semiconductor Science and Technology
Volume	25
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/25/4/045018
State	Published - 2010

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abstract = "A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.",

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AU - Grasse, C.

AU - Boehm, G.

AU - Mueller, M.

AU - Gruendl, T.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2010

Y1 - 2010

N2 - A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

AB - A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 νm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 νm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs.

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JO - Semiconductor Science and Technology

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ER -

Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

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