Elemental analysis on group-III nitrides using heavy ion ERD

G. Dollinger; S. Karsch; O. Ambacher; H. Angerer; A. Bergmaier; O. Schmelmer; M. Stutzmann

Elemental analysis on group-III nitrides using heavy ion ERD

G. Dollinger
, S. Karsch
, O. Ambacher
, H. Angerer
, A. Bergmaier
, O. Schmelmer
, M. Stutzmann

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Elastic recoil detection (ERD) using energetic heavy ion beams is used to measure depth profiles of light and medium heavy elements in thin films. The main advantages of ERD are the possibilities of obtaining reliable and quantitative results, a sensitivity in the ppm region or a depth resolution even better than 1 nm. ERD analysis is employed to obtain quantitative information about the aluminum content of molar fraction in MBE grown Al_xGa_1-xN layers on Al₂O₃ substrates. Nitridation of heated Al₂O₃ substrates in NH₃ atmosphere is investigated using high resolution ERD. The impurity content of group III nitrides is investigated on deposition conditions for both MBE and MOCVD grown samples.

Original language	English
Pages (from-to)	745-756
Number of pages	12
Journal	Materials Research Society Symposium - Proceedings
Volume	482
State	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1 Dec 1997 → 4 Dec 1997

Cite this

@article{bad87e9a0c824591a511eb32c5ef76ca,

title = "Elemental analysis on group-III nitrides using heavy ion ERD",

abstract = "Elastic recoil detection (ERD) using energetic heavy ion beams is used to measure depth profiles of light and medium heavy elements in thin films. The main advantages of ERD are the possibilities of obtaining reliable and quantitative results, a sensitivity in the ppm region or a depth resolution even better than 1 nm. ERD analysis is employed to obtain quantitative information about the aluminum content of molar fraction in MBE grown AlxGa1-xN layers on Al2O3 substrates. Nitridation of heated Al2O3 substrates in NH3 atmosphere is investigated using high resolution ERD. The impurity content of group III nitrides is investigated on deposition conditions for both MBE and MOCVD grown samples.",

author = "G. Dollinger and S. Karsch and O. Ambacher and H. Angerer and A. Bergmaier and O. Schmelmer and M. Stutzmann",

year = "1997",

language = "English",

volume = "482",

pages = "745--756",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Elemental analysis on group-III nitrides using heavy ion ERD

AU - Dollinger, G.

AU - Karsch, S.

AU - Ambacher, O.

AU - Angerer, H.

AU - Bergmaier, A.

AU - Schmelmer, O.

AU - Stutzmann, M.

PY - 1997

Y1 - 1997

N2 - Elastic recoil detection (ERD) using energetic heavy ion beams is used to measure depth profiles of light and medium heavy elements in thin films. The main advantages of ERD are the possibilities of obtaining reliable and quantitative results, a sensitivity in the ppm region or a depth resolution even better than 1 nm. ERD analysis is employed to obtain quantitative information about the aluminum content of molar fraction in MBE grown AlxGa1-xN layers on Al2O3 substrates. Nitridation of heated Al2O3 substrates in NH3 atmosphere is investigated using high resolution ERD. The impurity content of group III nitrides is investigated on deposition conditions for both MBE and MOCVD grown samples.

AB - Elastic recoil detection (ERD) using energetic heavy ion beams is used to measure depth profiles of light and medium heavy elements in thin films. The main advantages of ERD are the possibilities of obtaining reliable and quantitative results, a sensitivity in the ppm region or a depth resolution even better than 1 nm. ERD analysis is employed to obtain quantitative information about the aluminum content of molar fraction in MBE grown AlxGa1-xN layers on Al2O3 substrates. Nitridation of heated Al2O3 substrates in NH3 atmosphere is investigated using high resolution ERD. The impurity content of group III nitrides is investigated on deposition conditions for both MBE and MOCVD grown samples.

UR - https://www.scopus.com/pages/publications/0031386533

M3 - Conference article

AN - SCOPUS:0031386533

SN - 0272-9172

VL - 482

SP - 745

EP - 756

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Elemental analysis on group-III nitrides using heavy ion ERD

Abstract

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