Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

A. T. Winzer; R. Goldhahn; G. Gobsch; A. Dadgar; A. Krost; O. Weidemann; M. Stutzmann; M. Eickhoff

doi:10.1063/1.2161394

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The effect of hydrogen exposure on the properties of catalytic PtAlGaNGaN heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in the AlGaN barrier. From these data, the hydrogen-induced changes of the two-dimensional electron gas (2DEG) concentration underneath the catalytic gate contact are quantitatively determined. The exposure increases the 2DEG concentration by 1.7× 1012 e/ cm2 (1.3× 1012 e/ cm2) and decreases the Schottky barrier height by 0.85 V (0.65 V) for barrier Al contents of 0.15 (0.20).

Original language	English
Article number	024101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2161394
State	Published - 2006

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title = "Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen",

abstract = "The effect of hydrogen exposure on the properties of catalytic PtAlGaNGaN heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in the AlGaN barrier. From these data, the hydrogen-induced changes of the two-dimensional electron gas (2DEG) concentration underneath the catalytic gate contact are quantitatively determined. The exposure increases the 2DEG concentration by 1.7× 1012 e/ cm2 (1.3× 1012 e/ cm2) and decreases the Schottky barrier height by 0.85 V (0.65 V) for barrier Al contents of 0.15 (0.20).",

author = "Winzer, {A. T.} and R. Goldhahn and G. Gobsch and A. Dadgar and A. Krost and O. Weidemann and M. Stutzmann and M. Eickhoff",

year = "2006",

doi = "10.1063/1.2161394",

language = "English",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

AU - Winzer, A. T.

AU - Goldhahn, R.

AU - Gobsch, G.

AU - Dadgar, A.

AU - Krost, A.

AU - Weidemann, O.

AU - Stutzmann, M.

AU - Eickhoff, M.

PY - 2006

Y1 - 2006

N2 - The effect of hydrogen exposure on the properties of catalytic PtAlGaNGaN heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in the AlGaN barrier. From these data, the hydrogen-induced changes of the two-dimensional electron gas (2DEG) concentration underneath the catalytic gate contact are quantitatively determined. The exposure increases the 2DEG concentration by 1.7× 1012 e/ cm2 (1.3× 1012 e/ cm2) and decreases the Schottky barrier height by 0.85 V (0.65 V) for barrier Al contents of 0.15 (0.20).

AB - The effect of hydrogen exposure on the properties of catalytic PtAlGaNGaN heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in the AlGaN barrier. From these data, the hydrogen-induced changes of the two-dimensional electron gas (2DEG) concentration underneath the catalytic gate contact are quantitatively determined. The exposure increases the 2DEG concentration by 1.7× 1012 e/ cm2 (1.3× 1012 e/ cm2) and decreases the Schottky barrier height by 0.85 V (0.65 V) for barrier Al contents of 0.15 (0.20).

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U2 - 10.1063/1.2161394

DO - 10.1063/1.2161394

M3 - Article

AN - SCOPUS:30744436537

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 024101

ER -

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

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