Electronic transport in thermally crystallized SiC films on sapphire

W. Hellmich, G. Müller, G. Krötz, G. Derst, S. Kalbitzer

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Fine-grained (d ≈ 0.1 μm), polycrystalline (pc) SiC films were prepared on top of insulating and optically transparent sapphire substrates by a thermal crystallization technique (SiCOS films). Unlike high-temperature deposited pc-SiC films, SiCOS films exhibit a very low d.c. conductivity in the dark (σ ≈ 10-8 Ω-1 cm-1) and an efficient photoconductivity on illumination with short-wavelength UV light. Relatively high n- or p-type conductivities (σ ≈ 1 Ω-1 cm-1) were obtained after implantation of N, P and Al ions. It is argued that the electronic transport in the thermally crystallized films is limited by a grain-boundary-dominated conduction process in which thermal activation across potential barriers competes with tunnelling through these same barriers.

Original languageEnglish
Pages (from-to)147-150
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume29
Issue number1-3
DOIs
StatePublished - Jan 1995
Externally publishedYes

Keywords

  • Electrical measurements
  • Ion implantation
  • Silicon carbide

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