Electronic structure and optical properties of short-period α-SnnGem superlattices

P. Vogl, J. Olajos, W. Wegscheider, G. Abstreiter

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Short period α-Sn/Ge strained layer superlattices have been prepared on Ge(001) substrates by low temperature molecular beam epitaxy. We have achieved almost defect free and thermally stable single crystalline structures. Photourrent measurements in a series of Sn1Gem(m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in good agreement with band structure calculations. A direct fundamental energy gap and large direct band gap absorption is predicted for a slightly increased lateral lattice constant in α-Sn/Ge superlattices.

Original languageEnglish
Pages (from-to)83-86
Number of pages4
JournalSurface Science
Issue number1-3
StatePublished - 1992


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