Electronic states in the gap of amorphous silicon-germanium alloys

M. Stutzmann, C. C. Tsai, R. A. Street

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The electron spin resonance spectra of a-Si0.7Ge0.3:H alloys are investigated as a function of doping with PH3 and B2H6. Undoped and lightly-doped samples have Si and Ge dangling bonds as the main deep paramagnetic defects. From the doping dependence of the corresponding spin signals a higher average energy for the Ge dangling bond levels is deduced. The conduction band tail resonance (g = 2.0083) observed for strong P-doping is interpreted as due to fairly delocalized wavefunctions averaging over Si and Ge antibonding states. In contrast, the valence band tail states adjacent to the dangling bond levels are dominated by localized GeGe bonding orbitals.

Original languageEnglish
Pages (from-to)1011-1014
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
StatePublished - 2 Dec 1987
Externally publishedYes


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