Abstract
High mobility electron and hole channels have been achieved in selectively doped strained Si and Ge layers, respectively. Electronic transport properties of such structures are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 68-71 |
| Number of pages | 4 |
| Journal | Physica Scripta Topical Issues |
| Volume | 68 |
| DOIs | |
| State | Published - 1996 |
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