Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

P. W. Fry; M. S. Skolnick; D. J. Mowbray; I. E. Itskevich; J. J. Finley; L. R. Wilson; K. L. Schumacher; J. A. Barker; E. P. O'Reilly; M. Al-Khafaji; A. G. Cullis; M. Hopkinson; J. C. Clark; G. Hill

doi:10.1016/S1386-9477(00)00184-3

Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

P. W. Fry, M. S. Skolnick, D. J. Mowbray, I. E. Itskevich, J. J. Finley, L. R. Wilson, K. L. Schumacher, J. A. Barker, E. P. O'Reilly, M. Al-Khafaji, A. G. Cullis, M. Hopkinson, J. C. Clark, G. Hill

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17 Scopus citations

Abstract

The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high-electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots and in-plane anisotropies are also determined.

Original language	English
Pages (from-to)	106-113
Number of pages	8
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	9
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(00)00184-3
State	Published - Jan 2001
Externally published	Yes

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Fry, P. W., Skolnick, M. S., Mowbray, D. J., Itskevich, I. E., Finley, J. J., Wilson, L. R., Schumacher, K. L., Barker, J. A., O'Reilly, E. P., Al-Khafaji, M., Cullis, A. G., Hopkinson, M., Clark, J. C., & Hill, G. (2001). Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy. Physica E: Low-Dimensional Systems and Nanostructures, 9(1), 106-113. https://doi.org/10.1016/S1386-9477(00)00184-3

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title = "Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy",

abstract = "The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high-electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots and in-plane anisotropies are also determined.",

author = "Fry, {P. W.} and Skolnick, {M. S.} and Mowbray, {D. J.} and Itskevich, {I. E.} and Finley, {J. J.} and Wilson, {L. R.} and Schumacher, {K. L.} and Barker, {J. A.} and O'Reilly, {E. P.} and M. Al-Khafaji and Cullis, {A. G.} and M. Hopkinson and Clark, {J. C.} and G. Hill",

year = "2001",

month = jan,

doi = "10.1016/S1386-9477(00)00184-3",

language = "English",

volume = "9",

pages = "106--113",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1",

}

Fry, PW, Skolnick, MS, Mowbray, DJ, Itskevich, IE, Finley, JJ, Wilson, LR, Schumacher, KL, Barker, JA, O'Reilly, EP, Al-Khafaji, M, Cullis, AG, Hopkinson, M, Clark, JC & Hill, G 2001, 'Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy', Physica E: Low-Dimensional Systems and Nanostructures, vol. 9, no. 1, pp. 106-113. https://doi.org/10.1016/S1386-9477(00)00184-3

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T1 - Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

AU - Fry, P. W.

AU - Skolnick, M. S.

AU - Mowbray, D. J.

AU - Itskevich, I. E.

AU - Finley, J. J.

AU - Wilson, L. R.

AU - Schumacher, K. L.

AU - Barker, J. A.

AU - O'Reilly, E. P.

AU - Al-Khafaji, M.

AU - Cullis, A. G.

AU - Hopkinson, M.

AU - Clark, J. C.

AU - Hill, G.

PY - 2001/1

Y1 - 2001/1

N2 - The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high-electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots and in-plane anisotropies are also determined.

AB - The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high-electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots and in-plane anisotropies are also determined.

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U2 - 10.1016/S1386-9477(00)00184-3

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M3 - Article

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VL - 9

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JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

ER -

Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

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