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Electronic properties of doped glow-discharge amorphous germanium
D. Hauschildt
,
M. Stutzmann
, J. Stuke
, H. Dersch
Philipps-Universität Marburg
Research output
:
Contribution to journal
›
Article
›
peer-review
15
Scopus citations
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Keyphrases
A-Si
33%
Activation Energy
33%
Amorphous Germanium
100%
Annealing
33%
Boron
33%
Defect States
33%
Dopant
33%
Electronic Properties
100%
Fermi Energy
33%
Fermi Level
33%
Glow Discharge
100%
Hydrogen Effusion
100%
Irradiation
33%
MeV Electrons
33%
Midgap
33%
Mobility Edge
33%
Order of Magnitude
33%
Phosphorus
33%
Spin Density
33%
Temperature-dependent Thermal Conductivity
33%
Thermoelectric
100%
Undoped
33%
Material Science
Activation Energy
33%
Boron
33%
Density
33%
Doping (Additives)
33%
Electronic Property
100%
Germanium
100%
Thermoelectrics
100%
Engineering
Activation Energy
33%
Dopants
33%
Fermi Energy
33%
Fermi Level
33%
Glow Discharge
100%
Spin Density
33%
Temperature Dependence
33%
Thermoelectricity
100%
Physics
Activation Energy
33%
Conductance
66%
Glow Discharge
100%
Temperature Dependence
33%
Thermoelectricity
100%