Electronic properties of doped glow-discharge amorphous germanium

D. Hauschildt, M. Stutzmann, J. Stuke, H. Dersch

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

For glow-discharge a-Ge:H doped with phosphorus and boron the temperature dependence of conductivity and thermoelectric power has been investigated. For both dopants a maximum shift of the Fermi energy EF to the mobility edges of about 0.3 eV is obtained. The difference of the conductivity and thermoelectric power activation energies EQ = Eδ-Es lies around 0.16 eV and varies only little with doping; it rises somewhat by hydrogen effusion at temperatures above 300°C. The spin density of undoped a-Ge:H is approximately two orders of magnitude larger than for a-Si:H;it increases by irradiation with 3 MeV electrons and by hydrogen effusion by a factor of 4-5. Annealing at temperatures above 300°C leads to a positive sign of the thermoelectric power indicating that defect states created by hydrogen effusion pull the Fermi level below midgap.

Original languageEnglish
Pages (from-to)319-330
Number of pages12
JournalSolar Energy Materials
Volume8
Issue number1-3
DOIs
StatePublished - Nov 1982
Externally publishedYes

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