Electronic and transport properties of silicon nanowires

F. Sacconi, M. P. Persson, M. Povolotskyi, L. Latessa, A. Pecchia, A. Gagliardi, A. Balint, T. Fraunheim, A. Di Carlo

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalJournal of Computational Electronics
Volume6
Issue number1-3
DOIs
StatePublished - Sep 2007
Externally publishedYes

Keywords

  • NEGF
  • Nano MOSFET
  • Silicon nanowires
  • Tight-binding

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