Electronic and transport properties of silicon nanowires

F. Sacconi; M. P. Persson; M. Povolotskyi; L. Latessa; A. Pecchia; A. Gagliardi; A. Balint; T. Fraunheim; A. Di Carlo

doi:10.1007/s10825-006-0138-y

Electronic and transport properties of silicon nanowires

F. Sacconi, M. P. Persson, M. Povolotskyi, L. Latessa, A. Pecchia, A. Gagliardi, A. Balint, T. Fraunheim, A. Di Carlo

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO₂ terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.

Original language	English
Pages (from-to)	329-333
Number of pages	5
Journal	Journal of Computational Electronics
Volume	6
Issue number	1-3
DOIs	https://doi.org/10.1007/s10825-006-0138-y
State	Published - Sep 2007
Externally published	Yes

Keywords

NEGF
Nano MOSFET
Silicon nanowires
Tight-binding

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10.1007/s10825-006-0138-y

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abstract = "The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.",

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T1 - Electronic and transport properties of silicon nanowires

AU - Sacconi, F.

AU - Persson, M. P.

AU - Povolotskyi, M.

AU - Latessa, L.

AU - Pecchia, A.

AU - Gagliardi, A.

AU - Balint, A.

AU - Fraunheim, T.

AU - Di Carlo, A.

PY - 2007/9

Y1 - 2007/9

N2 - The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.

AB - The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.

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KW - Silicon nanowires

KW - Tight-binding

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JF - Journal of Computational Electronics

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Electronic and transport properties of silicon nanowires

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Keywords

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