Electronic and phonon-mediated gap modes in A15 compounds

R. Hackl; R. Kaiser; W. Gläser

doi:10.1016/0921-4534(89)91090-3

Electronic and phonon-mediated gap modes in A15 compounds

R. Hackl
, R. Kaiser
, W. Gläser

Department of Physics

Walther-Meissner-Institut

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Results of Raman-scattering experiments on superconducting A15 Nb3Sn and V3Si are reported. Phononic and electronic excitations of all three Raman-active symmetries are investigated as a function of temperature. The origin of the observed gap modes is discussed. The zero-temperature gap energies found by light scattering are 4.7 and 5.4 kBTc for V3Si and Nb3Sn, respectively.

Original language	English
Pages (from-to)	431-432
Number of pages	2
Journal	Physica C: Superconductivity and its Applications
Volume	162-164
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4534(89)91090-3
State	Published - Dec 1989

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@article{929e6ae433514694a0ac55b9050253ef,

title = "Electronic and phonon-mediated gap modes in A15 compounds",

abstract = "Results of Raman-scattering experiments on superconducting A15 Nb3Sn and V3Si are reported. Phononic and electronic excitations of all three Raman-active symmetries are investigated as a function of temperature. The origin of the observed gap modes is discussed. The zero-temperature gap energies found by light scattering are 4.7 and 5.4 kBTc for V3Si and Nb3Sn, respectively.",

author = "R. Hackl and R. Kaiser and W. Gl{\"a}ser",

note = "Funding Information: 5\% (Fig. 2,4) in qualitative accordance with theoretical predictions for NbSes. s In conclusion, our experiments reveal some new aspects concerning the origin of the gap modes. The {"}A\textasciitilde{}{"} bands being of electronic origin exhibit an anisotropy of nearly 10\textasciitilde{}. The maximum gap energies of 4.7 and 5.4 keTe observed in V\textasciitilde{}SI and Nb3Sn, respectively, exceed. the values found by other means. The low energy of the E\textasciitilde{} gap mode is assumed to originate from the specific scattering mechanism. Financial support by the Deutsche For-schungsgemeischaft and the Bundesforschungs-mlnlsterium is gratefully acknowledged.",

year = "1989",

month = dec,

doi = "10.1016/0921-4534(89)91090-3",

language = "English",

volume = "162-164",

pages = "431--432",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier B.V.",

number = "PART 1",

}

TY - JOUR

T1 - Electronic and phonon-mediated gap modes in A15 compounds

AU - Hackl, R.

AU - Kaiser, R.

AU - Gläser, W.

N1 - Funding Information: 5% (Fig. 2,4) in qualitative accordance with theoretical predictions for NbSes. s In conclusion, our experiments reveal some new aspects concerning the origin of the gap modes. The "A~" bands being of electronic origin exhibit an anisotropy of nearly 10~. The maximum gap energies of 4.7 and 5.4 keTe observed in V~SI and Nb3Sn, respectively, exceed. the values found by other means. The low energy of the E~ gap mode is assumed to originate from the specific scattering mechanism. Financial support by the Deutsche For-schungsgemeischaft and the Bundesforschungs-mlnlsterium is gratefully acknowledged.

PY - 1989/12

Y1 - 1989/12

N2 - Results of Raman-scattering experiments on superconducting A15 Nb3Sn and V3Si are reported. Phononic and electronic excitations of all three Raman-active symmetries are investigated as a function of temperature. The origin of the observed gap modes is discussed. The zero-temperature gap energies found by light scattering are 4.7 and 5.4 kBTc for V3Si and Nb3Sn, respectively.

AB - Results of Raman-scattering experiments on superconducting A15 Nb3Sn and V3Si are reported. Phononic and electronic excitations of all three Raman-active symmetries are investigated as a function of temperature. The origin of the observed gap modes is discussed. The zero-temperature gap energies found by light scattering are 4.7 and 5.4 kBTc for V3Si and Nb3Sn, respectively.

UR - https://www.scopus.com/pages/publications/0024927259

U2 - 10.1016/0921-4534(89)91090-3

DO - 10.1016/0921-4534(89)91090-3

M3 - Article

AN - SCOPUS:0024927259

SN - 0921-4534

VL - 162-164

SP - 431

EP - 432

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - PART 1

ER -

Electronic and phonon-mediated gap modes in A15 compounds

Abstract

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