Electron spin resonance of phosphorus in n-type diamond

T. Graf; M. S. Brandt; C. E. Nebel; M. Stutzmann; S. Koizumi

doi:10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P

Electron spin resonance of phosphorus in n-type diamond

T. Graf, M. S. Brandt, C. E. Nebel, M. Stutzmann, S. Koizumi

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

Electron spin resonance (ESR) of electrically active centers in n-type epitaxial diamond films has been measured by electrically detected magnetic resonance (EDMR). In the regime of hopping conductivity, ³¹P-related centers could be separated from a large number of P1 nitrogen centers in the substrate crystal and from carbon dangling bond defects close to the electrical contacts. One of these centers is characterized by g = 2.0026, g| = 2.0042, A_iso = 17.6 G, and A_aniso = 1.8 G, which is incompatible with the predictions for hydrogenic donor states of phosphorus on substitutional sites. These predictions are better fulfilled by a second spurious center with approximately g = 2.006, A_iso = 380 G, and A_aniso = 15 G.

Original language	English
Pages (from-to)	434-441
Number of pages	8
Journal	Physica Status Solidi (A) Applied Research
Volume	193
Issue number	3
DOIs	https://doi.org/10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P
State	Published - Oct 2002
Event	7th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD) - Diepenbeek-Hassels, Belgium Duration: 13 Mar 2002 → 15 Mar 2002

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10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P

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title = "Electron spin resonance of phosphorus in n-type diamond",

abstract = "Electron spin resonance (ESR) of electrically active centers in n-type epitaxial diamond films has been measured by electrically detected magnetic resonance (EDMR). In the regime of hopping conductivity, 31P-related centers could be separated from a large number of P1 nitrogen centers in the substrate crystal and from carbon dangling bond defects close to the electrical contacts. One of these centers is characterized by g = 2.0026, g| = 2.0042, Aiso = 17.6 G, and Aaniso = 1.8 G, which is incompatible with the predictions for hydrogenic donor states of phosphorus on substitutional sites. These predictions are better fulfilled by a second spurious center with approximately g = 2.006, Aiso = 380 G, and Aaniso = 15 G.",

author = "T. Graf and Brandt, {M. S.} and Nebel, {C. E.} and M. Stutzmann and S. Koizumi",

year = "2002",

month = oct,

doi = "10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P",

language = "English",

volume = "193",

pages = "434--441",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

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note = "7th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD) ; Conference date: 13-03-2002 Through 15-03-2002",

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TY - JOUR

T1 - Electron spin resonance of phosphorus in n-type diamond

AU - Graf, T.

AU - Brandt, M. S.

AU - Nebel, C. E.

AU - Stutzmann, M.

AU - Koizumi, S.

PY - 2002/10

Y1 - 2002/10

N2 - Electron spin resonance (ESR) of electrically active centers in n-type epitaxial diamond films has been measured by electrically detected magnetic resonance (EDMR). In the regime of hopping conductivity, 31P-related centers could be separated from a large number of P1 nitrogen centers in the substrate crystal and from carbon dangling bond defects close to the electrical contacts. One of these centers is characterized by g = 2.0026, g| = 2.0042, Aiso = 17.6 G, and Aaniso = 1.8 G, which is incompatible with the predictions for hydrogenic donor states of phosphorus on substitutional sites. These predictions are better fulfilled by a second spurious center with approximately g = 2.006, Aiso = 380 G, and Aaniso = 15 G.

AB - Electron spin resonance (ESR) of electrically active centers in n-type epitaxial diamond films has been measured by electrically detected magnetic resonance (EDMR). In the regime of hopping conductivity, 31P-related centers could be separated from a large number of P1 nitrogen centers in the substrate crystal and from carbon dangling bond defects close to the electrical contacts. One of these centers is characterized by g = 2.0026, g| = 2.0042, Aiso = 17.6 G, and Aaniso = 1.8 G, which is incompatible with the predictions for hydrogenic donor states of phosphorus on substitutional sites. These predictions are better fulfilled by a second spurious center with approximately g = 2.006, Aiso = 380 G, and Aaniso = 15 G.

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U2 - 10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P

DO - 10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P

M3 - Conference article

AN - SCOPUS:0036809789

SN - 0031-8965

VL - 193

SP - 434

EP - 441

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 3

T2 - 7th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD)

Y2 - 13 March 2002 through 15 March 2002

ER -

Electron spin resonance of phosphorus in n-type diamond

Abstract

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