Electron radiation damage in amorphous Pd80Si20 at 4.6 K

S. Klaumünzer; W. Petry

doi:10.1016/0375-9601(82)90706-X

Electron radiation damage in amorphous Pd₈₀Si₂₀ at 4.6 K

S. Klaumünzer
, W. Petry

Free University of Berlin

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Irradiation of the metallic glass Pd₈₀Si₂₀ at 4.6 K with 3 MeV electrons enhances the electrical resistivity. The damage rates strongly resemble those found in crystalline metals. Thermal recovery is continuous from 10 to 500 K. The created defects are characterized by excess free volume and stress fields with ranges of the order of 10 Å.

Original language	English
Pages (from-to)	314-316
Number of pages	3
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	87
Issue number	6
DOIs	https://doi.org/10.1016/0375-9601(82)90706-X
State	Published - 18 Jan 1982
Externally published	Yes

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10.1016/0375-9601(82)90706-X

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@article{133b5923067b4304b738d564df8b5b19,

title = "Electron radiation damage in amorphous Pd80Si20 at 4.6 K",

abstract = "Irradiation of the metallic glass Pd80Si20 at 4.6 K with 3 MeV electrons enhances the electrical resistivity. The damage rates strongly resemble those found in crystalline metals. Thermal recovery is continuous from 10 to 500 K. The created defects are characterized by excess free volume and stress fields with ranges of the order of 10 {\AA}.",

author = "S. Klaum{\"u}nzer and W. Petry",

note = "Funding Information: We are grateful to Professor W. Schilling for his hospitality at the 1FF in Julich and the technical staff of the irr {\textquoteleft}ation facility for their expert assistance. We thani\textasciitilde{}.\textasciitilde{})r. F. Dworschak for critical comments. This work was supported by the German Bundes-ministerium f{\"u}r Forschung und Technologie.",

year = "1982",

month = jan,

day = "18",

doi = "10.1016/0375-9601(82)90706-X",

language = "English",

volume = "87",

pages = "314--316",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "6",

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TY - JOUR

T1 - Electron radiation damage in amorphous Pd80Si20 at 4.6 K

AU - Klaumünzer, S.

AU - Petry, W.

N1 - Funding Information: We are grateful to Professor W. Schilling for his hospitality at the 1FF in Julich and the technical staff of the irr ‘ation facility for their expert assistance. We thani~.~)r. F. Dworschak for critical comments. This work was supported by the German Bundes-ministerium für Forschung und Technologie.

PY - 1982/1/18

Y1 - 1982/1/18

N2 - Irradiation of the metallic glass Pd80Si20 at 4.6 K with 3 MeV electrons enhances the electrical resistivity. The damage rates strongly resemble those found in crystalline metals. Thermal recovery is continuous from 10 to 500 K. The created defects are characterized by excess free volume and stress fields with ranges of the order of 10 Å.

AB - Irradiation of the metallic glass Pd80Si20 at 4.6 K with 3 MeV electrons enhances the electrical resistivity. The damage rates strongly resemble those found in crystalline metals. Thermal recovery is continuous from 10 to 500 K. The created defects are characterized by excess free volume and stress fields with ranges of the order of 10 Å.

UR - https://www.scopus.com/pages/publications/0000094386

U2 - 10.1016/0375-9601(82)90706-X

DO - 10.1016/0375-9601(82)90706-X

M3 - Article

AN - SCOPUS:0000094386

SN - 0375-9601

VL - 87

SP - 314

EP - 316

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 6

ER -

Electron radiation damage in amorphous Pd₈₀Si₂₀ at 4.6 K

Abstract

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