Electron intersubband absorption in modulation and well-doped Si/Si1-xGex multiple quantum wells

H. Hertle; F. Schäffler; A. Zrenner; G. Abstreiter; E. Gornik

doi:10.1016/0040-6090(92)90029-B

Electron intersubband absorption in modulation and well-doped Si/Si_1-xGe_x multiple quantum wells

H. Hertle
, F. Schäffler
, A. Zrenner
, G. Abstreiter
, E. Gornik

TUM Emeriti of Excellence

Walter Schottky Institut
Daimler-Benz AG

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The intersubband absorption in the conduction band of strain-symmetrized Si/Si_1-xGe_x multiple quantum wells has been measured. Modulation- and well-doped samples with different well widths and carrier concentrations are studied in a temperature range from 8 K to room temperature. In good agreement with self-consistent subband calculations the observed absorption lines are attributed to intersubband transitions from the ground to the first excited state or from the first excited to the second excited state.

Original language	English
Pages (from-to)	20-23
Number of pages	4
Journal	Thin Solid Films
Volume	222
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(92)90029-B
State	Published - 20 Dec 1992

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title = "Electron intersubband absorption in modulation and well-doped Si/Si1-xGex multiple quantum wells",

abstract = "The intersubband absorption in the conduction band of strain-symmetrized Si/Si1-xGex multiple quantum wells has been measured. Modulation- and well-doped samples with different well widths and carrier concentrations are studied in a temperature range from 8 K to room temperature. In good agreement with self-consistent subband calculations the observed absorption lines are attributed to intersubband transitions from the ground to the first excited state or from the first excited to the second excited state.",

author = "H. Hertle and F. Sch{\"a}ffler and A. Zrenner and G. Abstreiter and E. Gornik",

year = "1992",

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T1 - Electron intersubband absorption in modulation and well-doped Si/Si1-xGex multiple quantum wells

AU - Hertle, H.

AU - Schäffler, F.

AU - Zrenner, A.

AU - Abstreiter, G.

AU - Gornik, E.

PY - 1992/12/20

Y1 - 1992/12/20

N2 - The intersubband absorption in the conduction band of strain-symmetrized Si/Si1-xGex multiple quantum wells has been measured. Modulation- and well-doped samples with different well widths and carrier concentrations are studied in a temperature range from 8 K to room temperature. In good agreement with self-consistent subband calculations the observed absorption lines are attributed to intersubband transitions from the ground to the first excited state or from the first excited to the second excited state.

AB - The intersubband absorption in the conduction band of strain-symmetrized Si/Si1-xGex multiple quantum wells has been measured. Modulation- and well-doped samples with different well widths and carrier concentrations are studied in a temperature range from 8 K to room temperature. In good agreement with self-consistent subband calculations the observed absorption lines are attributed to intersubband transitions from the ground to the first excited state or from the first excited to the second excited state.

UR - https://www.scopus.com/pages/publications/1542497557

U2 - 10.1016/0040-6090(92)90029-B

DO - 10.1016/0040-6090(92)90029-B

M3 - Article

AN - SCOPUS:1542497557

SN - 0040-6090

VL - 222

SP - 20

EP - 23

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Electron intersubband absorption in modulation and well-doped Si/Si_1-xGe_x multiple quantum wells

Abstract

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