Electron injection-induced effects in Mn-doped GaN

William Burdett; Olena Lopatiuk; Leonid Chernyak; Martin Hermann; Martin Stutzmann; Martin Eickhoff

doi:10.1063/1.1780606

Electron injection-induced effects in Mn-doped GaN

William Burdett
, Olena Lopatiuk
, Leonid Chernyak
, Martin Hermann
, Martin Stutzmann
, Martin Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The effects of electron injection were investigated in Mn-doped GaN. Electron injection introduced noticeable changes in the minority carrier diffusion length and cathodoluminescence. Recombination of nonequilibrium electron-hole pairs created by scanning electron microscopy (SEM) technique was found to cause the band-to-band cathodoluminescence. A multi-fold decrease of the band-to-band cathodoluminescence intensity in the temperature range of -50°C-80 °C. The results of the temperature-dependent cathodoluminescence measurements reveal a possible recovery of the cathodoluminescence intensity with an activation energy of 360 meV.

Original language	English
Pages (from-to)	3556-3558
Number of pages	3
Journal	Journal of Applied Physics
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.1780606
State	Published - 15 Sep 2004

Access to Document

10.1063/1.1780606

Cite this

@article{0a8c3848f4e0431ba73ba033e7368ffb,

title = "Electron injection-induced effects in Mn-doped GaN",

abstract = "The effects of electron injection were investigated in Mn-doped GaN. Electron injection introduced noticeable changes in the minority carrier diffusion length and cathodoluminescence. Recombination of nonequilibrium electron-hole pairs created by scanning electron microscopy (SEM) technique was found to cause the band-to-band cathodoluminescence. A multi-fold decrease of the band-to-band cathodoluminescence intensity in the temperature range of -50°C-80 °C. The results of the temperature-dependent cathodoluminescence measurements reveal a possible recovery of the cathodoluminescence intensity with an activation energy of 360 meV.",

author = "William Burdett and Olena Lopatiuk and Leonid Chernyak and Martin Hermann and Martin Stutzmann and Martin Eickhoff",

year = "2004",

month = sep,

day = "15",

doi = "10.1063/1.1780606",

language = "English",

volume = "96",

pages = "3556--3558",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Electron injection-induced effects in Mn-doped GaN

AU - Burdett, William

AU - Lopatiuk, Olena

AU - Chernyak, Leonid

AU - Hermann, Martin

AU - Stutzmann, Martin

AU - Eickhoff, Martin

PY - 2004/9/15

Y1 - 2004/9/15

N2 - The effects of electron injection were investigated in Mn-doped GaN. Electron injection introduced noticeable changes in the minority carrier diffusion length and cathodoluminescence. Recombination of nonequilibrium electron-hole pairs created by scanning electron microscopy (SEM) technique was found to cause the band-to-band cathodoluminescence. A multi-fold decrease of the band-to-band cathodoluminescence intensity in the temperature range of -50°C-80 °C. The results of the temperature-dependent cathodoluminescence measurements reveal a possible recovery of the cathodoluminescence intensity with an activation energy of 360 meV.

AB - The effects of electron injection were investigated in Mn-doped GaN. Electron injection introduced noticeable changes in the minority carrier diffusion length and cathodoluminescence. Recombination of nonequilibrium electron-hole pairs created by scanning electron microscopy (SEM) technique was found to cause the band-to-band cathodoluminescence. A multi-fold decrease of the band-to-band cathodoluminescence intensity in the temperature range of -50°C-80 °C. The results of the temperature-dependent cathodoluminescence measurements reveal a possible recovery of the cathodoluminescence intensity with an activation energy of 360 meV.

UR - https://www.scopus.com/pages/publications/4944261470

U2 - 10.1063/1.1780606

DO - 10.1063/1.1780606

M3 - Article

AN - SCOPUS:4944261470

SN - 0021-8979

VL - 96

SP - 3556

EP - 3558

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Electron injection-induced effects in Mn-doped GaN

Abstract

Access to Document

Other files and links

Fingerprint

Cite this