Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes

M. Markmann; R. Neumann; K. Brunner; G. Abstreiter

doi:10.1016/S0921-5107(00)00674-7

Electron and hole impact excitation of Er in MBE grown Si:O and Si_1-yC_y diodes

M. Markmann, R. Neumann, K. Brunner, G. Abstreiter

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have investigated the doping and electroluminescence (EL) properties at 1.54 μm of erbium ions in Si:O and Si_1-yC_y:Er layers completely grown by MBE. Erbium in Si_1-yC_y:Er films shows a lower doping density (p = + 1.6 × 10¹⁷ cm^-3) than erbium in Si:O (n = - 3 × 10¹⁸ cm^-3). The energy levels responsible for doping and optical erbium activation are different because different activation energies are observed. To realise both maximum luminescence output and low doping concentration, it is important to incorporate the carbon on substitutional lattice sites. The efficiency for electron and hole excitation by impact processes is compared. Electrons are about 5000 × more efficient for impact excitation of Er³⁺ than holes.

Original language	English
Pages (from-to)	109-112
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	81
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00674-7
State	Published - 24 Apr 2001

Keywords

Carbon
Electroluminescence
Erbium
Molecular beam epitaxy
Silicon

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10.1016/S0921-5107(00)00674-7

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title = "Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes",

abstract = "We have investigated the doping and electroluminescence (EL) properties at 1.54 μm of erbium ions in Si:O and Si1-yCy:Er layers completely grown by MBE. Erbium in Si1-yCy:Er films shows a lower doping density (p = + 1.6 × 1017 cm-3) than erbium in Si:O (n = - 3 × 1018 cm-3). The energy levels responsible for doping and optical erbium activation are different because different activation energies are observed. To realise both maximum luminescence output and low doping concentration, it is important to incorporate the carbon on substitutional lattice sites. The efficiency for electron and hole excitation by impact processes is compared. Electrons are about 5000 × more efficient for impact excitation of Er3+ than holes.",

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author = "M. Markmann and R. Neumann and K. Brunner and G. Abstreiter",

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T1 - Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes

AU - Markmann, M.

AU - Neumann, R.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2001/4/24

Y1 - 2001/4/24

N2 - We have investigated the doping and electroluminescence (EL) properties at 1.54 μm of erbium ions in Si:O and Si1-yCy:Er layers completely grown by MBE. Erbium in Si1-yCy:Er films shows a lower doping density (p = + 1.6 × 1017 cm-3) than erbium in Si:O (n = - 3 × 1018 cm-3). The energy levels responsible for doping and optical erbium activation are different because different activation energies are observed. To realise both maximum luminescence output and low doping concentration, it is important to incorporate the carbon on substitutional lattice sites. The efficiency for electron and hole excitation by impact processes is compared. Electrons are about 5000 × more efficient for impact excitation of Er3+ than holes.

AB - We have investigated the doping and electroluminescence (EL) properties at 1.54 μm of erbium ions in Si:O and Si1-yCy:Er layers completely grown by MBE. Erbium in Si1-yCy:Er films shows a lower doping density (p = + 1.6 × 1017 cm-3) than erbium in Si:O (n = - 3 × 1018 cm-3). The energy levels responsible for doping and optical erbium activation are different because different activation energies are observed. To realise both maximum luminescence output and low doping concentration, it is important to incorporate the carbon on substitutional lattice sites. The efficiency for electron and hole excitation by impact processes is compared. Electrons are about 5000 × more efficient for impact excitation of Er3+ than holes.

KW - Carbon

KW - Electroluminescence

KW - Erbium

KW - Molecular beam epitaxy

KW - Silicon

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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Electron and hole impact excitation of Er in MBE grown Si:O and Si_1-yC_y diodes

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