Electroluminescent properties of a-SiOx:H alloys

P. Knápek, K. Luterová, I. Pelant, A. Fejfar, J. Kočka, J. Kudrna, P. Malý, R. Janssen, M. Stutzmann

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We report on a study of electroluminescence of p-i-n structures fabricated from a substoichiometric hydrogenated amorphous silicon-oxygen alloy with oxygen content ∼ 15 at.%. The devices exhibit a rectification ratio of four orders of magnitude and emit electroluminescence under forward bias. The electroluminescence external quantum efficiency at T = 295 K is of the order of 10-6%. Analysis of thermal quenching of photoluminescence and electroluminescence in the temperature range 100-480 K, combined with picosecond optical pump and probe measurements, indicate contributions of molecular-like silicon structures and of electron-hole recombination in the band tail states to the process of light emission at room temperature.

Original languageEnglish
Pages (from-to)1160-1163
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
StatePublished - May 1998


  • Electroluminescence
  • Light emission
  • Silicon-oxygen alloy


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