Electroluminescence spectroscopy of intervalley scattering and hot-hole transport in a GaAAs tunneling structure

We have carried out an investigation by electroluminescence (EL) spectroscopy of hot-electron and -hole transport in a p-i-n GaAs/(Formula presented)(Formula presented)As single-barrier tunneling structure at high electric fields (∼150 kV (Formula presented)). We observe EL arising from hot electrons in the p-type collector which reenter the Γ conduction-band valley from the L minimum. Analysis of the EL spectra provides an estimate of the relative Γ-L scattering rates by longitudinal and transverse phonon emission. In addition we observe EL due to recombination of hot holes injected into the spin-orbit split-off valence band of the n-type emitter region. Measurement of the pressure dependence of the EL spectra permits unambiguous identification of these spectral features.