@inproceedings{503331193f724ca990e6cb8c80ca3eee,
title = "Electrically pumped VCSELs using type-II quantum wells for the mid-infrared",
abstract = "We demonstrate the extension of the wavelength range of InP-and GaSb-based buried tunnel junction VCSELs using type-II quantum wells. The InP-based devices emit at 2.5 μm and operate in continuous-wave (CW) up to 20°C, with a maximum single-mode output power above 500 μW. They exhibit a continuous electro-thermal tuning range of 5.2 nm. The GaSb-based devices emit up to 4 μm and operate in CW and pulsed mode until-7°C and 45°C, respectively. The maximum single-mode CW output power is 175 μW. A mode-hop free electro-thermal tuning of ∼19 nm is achieved. These VCSELs are highly promising for gas sensing applications.",
keywords = "GaSb, InP, Semiconductor laser, VCSEL, tunnel junction, type-II quantum well, vertical cavity surface emitting laser",
author = "Veerabathran, {G. K.} and S. Sprengel and A. Andrejew and Amann, {M. C.}",
note = "Publisher Copyright: {\textcopyright} 2018 SPIE.; Smart Photonic and Optoelectronic Integrated Circuits XX 2018 ; Conference date: 29-01-2018 Through 01-02-2018",
year = "2018",
doi = "10.1117/12.2286325",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Sailing He and El-Hang Lee and Sailing He",
booktitle = "Smart Photonic and Optoelectronic Integrated Circuits XX",
}