Electrically pumped GaSb-based VCSEL with buried tunnel junction

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, M. C. Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 μm.

Original languageEnglish
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period4/05/089/05/08

Fingerprint

Dive into the research topics of 'Electrically pumped GaSb-based VCSEL with buried tunnel junction'. Together they form a unique fingerprint.

Cite this