Electrically detected magnetic resonance studies of phosphorus doped diamond

Phosphorus doped n-type epitaxial diamond films have been studied by electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). At low electric field, the dominant defects influencing the electronic transport are carbon dangling bonds, while at higher fields the anisotropic spin resonance signal of a new phosphorus-related center with g_⊥=2.0026, g_∥=2.0042, A_iso=17.6G, and A_aniso=1.8G is observed. These results indicate that room temperature conductivity in this film is dominated by hopping via phosphorus-related defect centers rather than via hydrogenic donor states of phosphorus atoms on substitutional sites.