Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures

T. Wimbauer; D. M. Hofmann; B. K. Meyer; M. S. Brandt; T. Brandl; M. W. Bayerl; N. M. Reinacher; M. Stutzmann; Y. Mochizuki; M. Mizuta

Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures

T. Wimbauer, D. M. Hofmann, B. K. Meyer, M. S. Brandt, T. Brandl, M. W. Bayerl, N. M. Reinacher, M. Stutzmann, Y. Mochizuki, M. Mizuta

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Electrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr⁴⁺. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Ga_i-interstitial and the As_Ga-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.

Original language	English
Pages (from-to)	511-516
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	442
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Cite this

@article{bb8b96326ad540019bb8dc4feeb69405,

title = "Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures",

abstract = "Electrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr4+. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Gai-interstitial and the AsGa-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.",

author = "T. Wimbauer and Hofmann, {D. M.} and Meyer, {B. K.} and Brandt, {M. S.} and T. Brandl and Bayerl, {M. W.} and Reinacher, {N. M.} and M. Stutzmann and Y. Mochizuki and M. Mizuta",

year = "1997",

language = "English",

volume = "442",

pages = "511--516",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures

AU - Wimbauer, T.

AU - Hofmann, D. M.

AU - Meyer, B. K.

AU - Brandt, M. S.

AU - Brandl, T.

AU - Bayerl, M. W.

AU - Reinacher, N. M.

AU - Stutzmann, M.

AU - Mochizuki, Y.

AU - Mizuta, M.

PY - 1997

Y1 - 1997

N2 - Electrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr4+. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Gai-interstitial and the AsGa-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.

AB - Electrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr4+. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Gai-interstitial and the AsGa-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.

UR - http://www.scopus.com/inward/record.url?scp=0030718884&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030718884

SN - 0272-9172

VL - 442

SP - 511

EP - 516

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures

Abstract

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