Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

N. M. Reinacher; M. S. Brandt; M. Stutzmann

doi:10.1063/1.363435

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

N. M. Reinacher
, M. S. Brandt
, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔH_po=68 G can be observed at low temperatures after current degradation. The signal exhibits a T^-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.

Original language	English
Pages (from-to)	4541-4547
Number of pages	7
Journal	Journal of Applied Physics
Volume	80
Issue number	8
DOIs	https://doi.org/10.1063/1.363435
State	Published - 15 Oct 1996

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title = "Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes",

abstract = "Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpo=68 G can be observed at low temperatures after current degradation. The signal exhibits a T-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.",

author = "Reinacher, \{N. M.\} and Brandt, \{M. S.\} and M. Stutzmann",

year = "1996",

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T1 - Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

AU - Reinacher, N. M.

AU - Brandt, M. S.

AU - Stutzmann, M.

PY - 1996/10/15

Y1 - 1996/10/15

N2 - Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpo=68 G can be observed at low temperatures after current degradation. The signal exhibits a T-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.

AB - Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpo=68 G can be observed at low temperatures after current degradation. The signal exhibits a T-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.

UR - https://www.scopus.com/pages/publications/0030259256

U2 - 10.1063/1.363435

DO - 10.1063/1.363435

M3 - Article

AN - SCOPUS:0030259256

SN - 0021-8979

VL - 80

SP - 4541

EP - 4547

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

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