Abstract
Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpo=68 G can be observed at low temperatures after current degradation. The signal exhibits a T-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.
Original language | English |
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Pages (from-to) | 4541-4547 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 80 |
Issue number | 8 |
DOIs | |
State | Published - 15 Oct 1996 |