Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

N. M. Reinacher, M. S. Brandt, M. Stutzmann

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpo=68 G can be observed at low temperatures after current degradation. The signal exhibits a T-2 temparature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal - most probably recombination at a n-type dopant-related defect near the p-n interface - is analyzed with respect to possible degradation mechanisms.

Original languageEnglish
Pages (from-to)4541-4547
Number of pages7
JournalJournal of Applied Physics
Volume80
Issue number8
DOIs
StatePublished - 15 Oct 1996

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