Electrically detected magnetic resonance at different microwave frequencies

Using microwave frequencies of 434 MHz, 9 and 34 GHz, the signal intensity of electrically detected magnetic resonance (EDMR) in amorphous hydrogenated silicon (a-Si:H) is found to be independent of the size of the Zeeman-level splitting. Taking into account the broadening of the resonance linewidth under strong saturation, the signal intensity follows the same dependence on the microwave field H1 irrespective of the frequency used. In GaAs, both the microwave power dependence and the temperature dependence of EDMR (As_Ga antisite and Cr) has been investigated at 9 GHz Below 10K, no significant dependence of the signal intensity on temperature was found. At higher temperatures, the signal intensity rapidly decreases due to the changes in the spin relaxation.