Electrical and structural properties of AlGaN: A comparison with CVD diamond

M. Stutzmann; O. Ambacher; H. Angerer; C. E. Nebel; E. Rohrer

doi:10.1016/s0925-9635(97)00204-5

Electrical and structural properties of AlGaN: A comparison with CVD diamond

M. Stutzmann, O. Ambacher, H. Angerer, C. E. Nebel, E. Rohrer

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Walter Schottky Institut

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Abstract

The present state of the AlGaN system is discussed in comparison to the known properties of CVD diamond. Growth and structural features of thin films as well as heterostructures are described. The variation of the fundamental optical gap with aluminum content provides the basis for the application of AlGaN in optical devices for the ultraviolet spectral range. The large conduction band offset between GaN and AlN together with reasonable dopability of AlGaN allow the construction of new field effect transistors with promising performance. The use of AlGaN in surface acoustic wave devices and the potentially negative electron affinity of alloys with high Al content are also briefly mentioned.

Original language	English
Pages (from-to)	123-128
Number of pages	6
Journal	Diamond and Related Materials
Volume	7
Issue number	2-5
DOIs	https://doi.org/10.1016/s0925-9635(97)00204-5
State	Published - Feb 1998

Keywords

Device
Doping
Growth
Optoelectronic properties

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10.1016/s0925-9635(97)00204-5

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title = "Electrical and structural properties of AlGaN: A comparison with CVD diamond",

abstract = "The present state of the AlGaN system is discussed in comparison to the known properties of CVD diamond. Growth and structural features of thin films as well as heterostructures are described. The variation of the fundamental optical gap with aluminum content provides the basis for the application of AlGaN in optical devices for the ultraviolet spectral range. The large conduction band offset between GaN and AlN together with reasonable dopability of AlGaN allow the construction of new field effect transistors with promising performance. The use of AlGaN in surface acoustic wave devices and the potentially negative electron affinity of alloys with high Al content are also briefly mentioned.",

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author = "M. Stutzmann and O. Ambacher and H. Angerer and Nebel, {C. E.} and E. Rohrer",

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TY - JOUR

T1 - Electrical and structural properties of AlGaN

T2 - A comparison with CVD diamond

AU - Stutzmann, M.

AU - Ambacher, O.

AU - Angerer, H.

AU - Nebel, C. E.

AU - Rohrer, E.

PY - 1998/2

Y1 - 1998/2

N2 - The present state of the AlGaN system is discussed in comparison to the known properties of CVD diamond. Growth and structural features of thin films as well as heterostructures are described. The variation of the fundamental optical gap with aluminum content provides the basis for the application of AlGaN in optical devices for the ultraviolet spectral range. The large conduction band offset between GaN and AlN together with reasonable dopability of AlGaN allow the construction of new field effect transistors with promising performance. The use of AlGaN in surface acoustic wave devices and the potentially negative electron affinity of alloys with high Al content are also briefly mentioned.

AB - The present state of the AlGaN system is discussed in comparison to the known properties of CVD diamond. Growth and structural features of thin films as well as heterostructures are described. The variation of the fundamental optical gap with aluminum content provides the basis for the application of AlGaN in optical devices for the ultraviolet spectral range. The large conduction band offset between GaN and AlN together with reasonable dopability of AlGaN allow the construction of new field effect transistors with promising performance. The use of AlGaN in surface acoustic wave devices and the potentially negative electron affinity of alloys with high Al content are also briefly mentioned.

KW - Device

KW - Doping

KW - Growth

KW - Optoelectronic properties

UR - http://www.scopus.com/inward/record.url?scp=0031996275&partnerID=8YFLogxK

U2 - 10.1016/s0925-9635(97)00204-5

DO - 10.1016/s0925-9635(97)00204-5

M3 - Article

AN - SCOPUS:0031996275

SN - 0925-9635

VL - 7

SP - 123

EP - 128

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 2-5

ER -

Electrical and structural properties of AlGaN: A comparison with CVD diamond

Abstract

Keywords

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