Electric properties of a-Si,S: H and a-Si,Se: H alloys

S. Aljishi; S. Al-Dallal; S. M. Al-Alawi; M. Hammam; H. S. Al-Alawi; M. Stutzmann; S. Jin; T. Muschik; R. Schawarz

doi:10.1016/0165-1633(91)90138-B

Electric properties of a-Si,S: H and a-Si,Se: H alloys

S. Aljishi
, S. Al-Dallal
, S. M. Al-Alawi
, M. Hammam
, H. S. Al-Alawi
, M. Stutzmann
, S. Jin
, T. Muschik
, R. Schawarz

University of Bahrain
Max Planck Institute for Solid State Research
Technical University of Munich

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Structural and electronic properties of novel high bandgap a-Si,S: H and a-Si,Se: H alloys are reported. The incorrporation of chalcogen atoms in the Si matrix is found to produce an increase in structural disorder which is evidenced by the increase in the amount of clustered hydrogen in the thin alloy films, an increase in the width of the localized band tail states and an increase in the gap state defect density. For optical gaps ranging from 1.85 to 2.1 eV, the photosensitivity of the a-Si,S: H and a-Si,Se: H alloys exceeds 10³.

Original language	English
Pages (from-to)	334-339
Number of pages	6
Journal	Solar Energy Materials
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1016/0165-1633(91)90138-B
State	Published - 1 Dec 1991
Externally published	Yes

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Cite this

@article{8a6a4e77630346708d8139871a79689b,

title = "Electric properties of a-Si,S: H and a-Si,Se: H alloys",

abstract = "Structural and electronic properties of novel high bandgap a-Si,S: H and a-Si,Se: H alloys are reported. The incorrporation of chalcogen atoms in the Si matrix is found to produce an increase in structural disorder which is evidenced by the increase in the amount of clustered hydrogen in the thin alloy films, an increase in the width of the localized band tail states and an increase in the gap state defect density. For optical gaps ranging from 1.85 to 2.1 eV, the photosensitivity of the a-Si,S: H and a-Si,Se: H alloys exceeds 103.",

author = "S. Aljishi and S. Al-Dallal and Al-Alawi, \{S. M.\} and M. Hammam and Al-Alawi, \{H. S.\} and M. Stutzmann and S. Jin and T. Muschik and R. Schawarz",

year = "1991",

month = dec,

day = "1",

doi = "10.1016/0165-1633(91)90138-B",

language = "English",

volume = "23",

pages = "334--339",

journal = "Solar Energy Materials",

issn = "0165-1633",

publisher = "Elsevier B.V.",

number = "2-4",

}

TY - JOUR

T1 - Electric properties of a-Si,S

T2 - H and a-Si,Se: H alloys

AU - Aljishi, S.

AU - Al-Dallal, S.

AU - Al-Alawi, S. M.

AU - Hammam, M.

AU - Al-Alawi, H. S.

AU - Stutzmann, M.

AU - Jin, S.

AU - Muschik, T.

AU - Schawarz, R.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Structural and electronic properties of novel high bandgap a-Si,S: H and a-Si,Se: H alloys are reported. The incorrporation of chalcogen atoms in the Si matrix is found to produce an increase in structural disorder which is evidenced by the increase in the amount of clustered hydrogen in the thin alloy films, an increase in the width of the localized band tail states and an increase in the gap state defect density. For optical gaps ranging from 1.85 to 2.1 eV, the photosensitivity of the a-Si,S: H and a-Si,Se: H alloys exceeds 103.

AB - Structural and electronic properties of novel high bandgap a-Si,S: H and a-Si,Se: H alloys are reported. The incorrporation of chalcogen atoms in the Si matrix is found to produce an increase in structural disorder which is evidenced by the increase in the amount of clustered hydrogen in the thin alloy films, an increase in the width of the localized band tail states and an increase in the gap state defect density. For optical gaps ranging from 1.85 to 2.1 eV, the photosensitivity of the a-Si,S: H and a-Si,Se: H alloys exceeds 103.

UR - https://www.scopus.com/pages/publications/0026370880

U2 - 10.1016/0165-1633(91)90138-B

DO - 10.1016/0165-1633(91)90138-B

M3 - Article

AN - SCOPUS:0026370880

SN - 0165-1633

VL - 23

SP - 334

EP - 339

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 2-4

ER -

Electric properties of a-Si,S: H and a-Si,Se: H alloys

Abstract

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