Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

F. Klappenberger; K. F. Renk; R. Summer; L. Keldysh; B. Rieder; W. Wegscheider

doi:10.1063/1.1595712

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

F. Klappenberger
, K. F. Renk
, R. Summer
, L. Keldysh
, B. Rieder
, W. Wegscheider

University of Regensburg
P.N. Lebedev Physical Institute of the Russian Academy of Sciences
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

Original language	English
Pages (from-to)	704-706
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1595712
State	Published - 28 Jul 2003
Externally published	Yes

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10.1063/1.1595712

Cite this

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title = "Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization",

abstract = "The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.",

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AU - Klappenberger, F.

AU - Renk, K. F.

AU - Summer, R.

AU - Keldysh, L.

AU - Rieder, B.

AU - Wegscheider, W.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

AB - The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

UR - https://www.scopus.com/pages/publications/0043014807

U2 - 10.1063/1.1595712

DO - 10.1063/1.1595712

M3 - Article

AN - SCOPUS:0043014807

SN - 0003-6951

VL - 83

SP - 704

EP - 706

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Abstract

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