Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

F. Klappenberger; K. F. Renk; R. Summer; L. Keldysh; B. Rieder; W. Wegscheider

doi:10.1063/1.1595712

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

F. Klappenberger, K. F. Renk, R. Summer, L. Keldysh, B. Rieder, W. Wegscheider

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

Original language	English
Pages (from-to)	704-706
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1595712
State	Published - 28 Jul 2003
Externally published	Yes

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10.1063/1.1595712

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title = "Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization",

abstract = "The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.",

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AU - Klappenberger, F.

AU - Renk, K. F.

AU - Summer, R.

AU - Keldysh, L.

AU - Rieder, B.

AU - Wegscheider, W.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

AB - The electric field induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization was analyzed. An electric pulse was guided to the sample and from the reflected and transmitted pulse, the I(V) characteristic was determined. The threshold field for ionization was reached by making use of a high-field domain whose formation was based on the Gunn effect.

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SP - 704

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JO - Applied Physics Letters

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Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Abstract

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