Abstract
The elastic properdes of CaSi2 are studied by X-ray analysis of strained suicide films grown by reactive deposition epitaxy on Si(111), The diffraction linewidths are found to be mainly determined by heterogeneous strain with negligible size broadening. Homogeneous strain is induced by lattice mismatch for epitaxial films thinner than 50 nm, and is thermally induced for thicker films. The isotropic and anisotropic Poisson ratios of CaSi2 are determined as v = 0.123(7) and vc = 0.105(35), respectively.
Original language | English |
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Pages (from-to) | 213-219 |
Number of pages | 7 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 185 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2001 |