Efficient and sustained photoelectrochemical water oxidation by cobalt oxide/silicon photoanodes with nanotextured interfaces

Jinhui Yang, Karl Walczak, Eitan Anzenberg, Francesca M. Toma, Guangbi Yuan, Jeffrey Beeman, Adam Schwartzberg, Yongjing Lin, Mark Hettick, Ali Javey, Joel W. Ager, Junko Yano, Heinz Frei, Ian D. Sharp

Research output: Contribution to journalArticlepeer-review

196 Scopus citations

Abstract

Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p+n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm2 at 1.23 V vs RHE, saturation current density of 30 mA/cm2, and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface.

Original languageEnglish
Pages (from-to)6191-6194
Number of pages4
JournalJournal of the American Chemical Society
Volume136
Issue number17
DOIs
StatePublished - 30 Apr 2014
Externally publishedYes

Fingerprint

Dive into the research topics of 'Efficient and sustained photoelectrochemical water oxidation by cobalt oxide/silicon photoanodes with nanotextured interfaces'. Together they form a unique fingerprint.

Cite this