@article{0ffce29f61724eb089d4108f7f3b7cc6,
title = "Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)",
abstract = "In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.",
author = "P. Stallhofer and Kotthaus, \{J. P.\} and G. Abstreiter",
note = "Funding Information: Acknowledgernents — We wish to thank the Max-Planck-Institut fUr Festkorperforschung for providing the high magnetic field facilities used in our experiments. We also thank G. Dorda, H. Gesch, and B. Vinter for stimulating discussions, and the Siemens Forschungs-laboratorien for supplying the Si.wafers. The financial support of the Deutsche Forschungsgemeinschaft via the Sonderforschungsbereich SFB 128 is gratefully acknowledged.",
year = "1979",
month = nov,
doi = "10.1016/0038-1098(79)90721-X",
language = "English",
volume = "32",
pages = "655--658",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Ltd.",
number = "8",
}