Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

P. Stallhofer; J. P. Kotthaus; G. Abstreiter

doi:10.1016/0038-1098(79)90721-X

Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

P. Stallhofer
, J. P. Kotthaus
, G. Abstreiter

Technical University of Munich
Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E₀ and E₀'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.

Original language	English
Pages (from-to)	655-658
Number of pages	4
Journal	Solid State Communications
Volume	32
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(79)90721-X
State	Published - Nov 1979
Externally published	Yes

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10.1016/0038-1098(79)90721-X

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@article{0ffce29f61724eb089d4108f7f3b7cc6,

title = "Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)",

abstract = "In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.",

author = "P. Stallhofer and Kotthaus, \{J. P.\} and G. Abstreiter",

note = "Funding Information: Acknowledgernents — We wish to thank the Max-Planck-Institut fUr Festkorperforschung for providing the high magnetic field facilities used in our experiments. We also thank G. Dorda, H. Gesch, and B. Vinter for stimulating discussions, and the Siemens Forschungs-laboratorien for supplying the Si.wafers. The financial support of the Deutsche Forschungsgemeinschaft via the Sonderforschungsbereich SFB 128 is gratefully acknowledged.",

year = "1979",

month = nov,

doi = "10.1016/0038-1098(79)90721-X",

language = "English",

volume = "32",

pages = "655--658",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "8",

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TY - JOUR

T1 - Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

AU - Stallhofer, P.

AU - Kotthaus, J. P.

AU - Abstreiter, G.

N1 - Funding Information: Acknowledgernents — We wish to thank the Max-Planck-Institut fUr Festkorperforschung for providing the high magnetic field facilities used in our experiments. We also thank G. Dorda, H. Gesch, and B. Vinter for stimulating discussions, and the Siemens Forschungs-laboratorien for supplying the Si.wafers. The financial support of the Deutsche Forschungsgemeinschaft via the Sonderforschungsbereich SFB 128 is gratefully acknowledged.

PY - 1979/11

Y1 - 1979/11

N2 - In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.

AB - In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density.

UR - https://www.scopus.com/pages/publications/0018543970

U2 - 10.1016/0038-1098(79)90721-X

DO - 10.1016/0038-1098(79)90721-X

M3 - Article

AN - SCOPUS:0018543970

SN - 0038-1098

VL - 32

SP - 655

EP - 658

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)

Abstract

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