Effects of thermal annealing on the band gap of GaInAsSb

Oliver Dier; Susanne Dachs; Markus Grau; Chun Lin; Christian Lauer; Markus Christian Amann

doi:10.1063/1.1900946

Effects of thermal annealing on the band gap of GaInAsSb

Oliver Dier
, Susanne Dachs
, Markus Grau
, Chun Lin
, Christian Lauer
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm -thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520°C, whereas for MQW structures the maximum shift was 61 meV.

Original language	English
Article number	151120
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1900946
State	Published - 2005

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title = "Effects of thermal annealing on the band gap of GaInAsSb",

abstract = "In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm -thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520°C, whereas for MQW structures the maximum shift was 61 meV.",

author = "Oliver Dier and Susanne Dachs and Markus Grau and Chun Lin and Christian Lauer and Amann, \{Markus Christian\}",

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T1 - Effects of thermal annealing on the band gap of GaInAsSb

AU - Dier, Oliver

AU - Dachs, Susanne

AU - Grau, Markus

AU - Lin, Chun

AU - Lauer, Christian

AU - Amann, Markus Christian

PY - 2005

Y1 - 2005

N2 - In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm -thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520°C, whereas for MQW structures the maximum shift was 61 meV.

AB - In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm -thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520°C, whereas for MQW structures the maximum shift was 61 meV.

UR - https://www.scopus.com/pages/publications/20844450891

U2 - 10.1063/1.1900946

DO - 10.1063/1.1900946

M3 - Article

AN - SCOPUS:20844450891

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SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151120

ER -

Effects of thermal annealing on the band gap of GaInAsSb

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