Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer

O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert

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