Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
Research output: Contribution to journal › Article › peer-review
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