Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

Christian Schlünder; Ralf Brederlow; Benno Ankele; Wolfgang Gustin; Karl Goser; Roland Thewes

doi:10.1016/j.microrel.2004.03.017

Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The effect of inhomogeneous negative bias temperature stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 and 0.25 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

Original language	English
Pages (from-to)	39-46
Number of pages	8
Journal	Microelectronics Reliability
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/j.microrel.2004.03.017
State	Published - Jan 2005
Externally published	Yes

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10.1016/j.microrel.2004.03.017

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title = "Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits",

abstract = "The effect of inhomogeneous negative bias temperature stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 and 0.25 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.",

author = "Christian Schl{\"u}nder and Ralf Brederlow and Benno Ankele and Wolfgang Gustin and Karl Goser and Roland Thewes",

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AU - Brederlow, Ralf

AU - Ankele, Benno

AU - Gustin, Wolfgang

AU - Goser, Karl

AU - Thewes, Roland

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AB - The effect of inhomogeneous negative bias temperature stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 and 0.25 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

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Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

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