Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

A. F.G. Monte; J. J. Finley; I. Itskevitch; M. S. Skolnick; D. J. Mowbray; M. Hopkins

doi:10.1016/S1386-9477(02)00727-0

Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

A. F.G. Monte
, J. J. Finley
, I. Itskevitch
, M. S. Skolnick
, D. J. Mowbray
, M. Hopkins

University of Sheffield
University of Hull

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report the results of photocurrent and bias-dependent photoluminescence (PL) in self-assembled InAs/GaAs quantum dots (QDs). The behaviour of the PL intensity at different QD emission energies as a function of the applied electric field show that the QDs are affected by charge accumulation effects. Experimental evidence of a dynamical process of dots charging and discharging of electrons and holes being stored within deeper confinement potential of the QDs is demonstrated.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00727-0
State	Published - Apr 2003
Externally published	Yes
Event	Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: 22 Jul 2002 → 26 Jul 2002

Keywords

Charge accumulation
InAs quantum dots
Photocurrent

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10.1016/S1386-9477(02)00727-0

Cite this

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title = "Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots",

abstract = "We report the results of photocurrent and bias-dependent photoluminescence (PL) in self-assembled InAs/GaAs quantum dots (QDs). The behaviour of the PL intensity at different QD emission energies as a function of the applied electric field show that the QDs are affected by charge accumulation effects. Experimental evidence of a dynamical process of dots charging and discharging of electrons and holes being stored within deeper confinement potential of the QDs is demonstrated.",

keywords = "Charge accumulation, InAs quantum dots, Photocurrent",

author = "Monte, \{A. F.G.\} and Finley, \{J. J.\} and I. Itskevitch and Skolnick, \{M. S.\} and Mowbray, \{D. J.\} and M. Hopkins",

note = "Funding Information: This work has been supported by EPSRC via Grants GR/N20997 and GR/N23516. A.F.G. Monte acknowledges a fellowship from CNPq-Brazil.; Proceedings pf the International Conference on Superlattices - ICSNN 2002 ; Conference date: 22-07-2002 Through 26-07-2002",

year = "2003",

month = apr,

doi = "10.1016/S1386-9477(02)00727-0",

language = "English",

volume = "17",

pages = "37--39",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

AU - Monte, A. F.G.

AU - Finley, J. J.

AU - Itskevitch, I.

AU - Skolnick, M. S.

AU - Mowbray, D. J.

AU - Hopkins, M.

N1 - Funding Information: This work has been supported by EPSRC via Grants GR/N20997 and GR/N23516. A.F.G. Monte acknowledges a fellowship from CNPq-Brazil.

PY - 2003/4

Y1 - 2003/4

N2 - We report the results of photocurrent and bias-dependent photoluminescence (PL) in self-assembled InAs/GaAs quantum dots (QDs). The behaviour of the PL intensity at different QD emission energies as a function of the applied electric field show that the QDs are affected by charge accumulation effects. Experimental evidence of a dynamical process of dots charging and discharging of electrons and holes being stored within deeper confinement potential of the QDs is demonstrated.

AB - We report the results of photocurrent and bias-dependent photoluminescence (PL) in self-assembled InAs/GaAs quantum dots (QDs). The behaviour of the PL intensity at different QD emission energies as a function of the applied electric field show that the QDs are affected by charge accumulation effects. Experimental evidence of a dynamical process of dots charging and discharging of electrons and holes being stored within deeper confinement potential of the QDs is demonstrated.

KW - Charge accumulation

KW - InAs quantum dots

KW - Photocurrent

UR - https://www.scopus.com/pages/publications/0037394975

U2 - 10.1016/S1386-9477(02)00727-0

DO - 10.1016/S1386-9477(02)00727-0

M3 - Conference article

AN - SCOPUS:0037394975

SN - 1386-9477

VL - 17

SP - 37

EP - 39

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - Proceedings pf the International Conference on Superlattices - ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -

Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

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Keywords

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