Effect of the interface on the local structure of Ge-Si nanostructures

A. V. Kolobov; H. Oyanagi; K. Brunner; G. Abstreiter; Y. Maeda; A. A. Shklyaev; S. Yamasaki; M. Ichikawa; K. Tanaka

doi:10.1116/1.1460894

Effect of the interface on the local structure of Ge-Si nanostructures

A. V. Kolobov, H. Oyanagi, K. Brunner, G. Abstreiter, Y. Maeda, A. A. Shklyaev, S. Yamasaki, M. Ichikawa, K. Tanaka

Natural Sciences

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An overview is given on several XAFS studies of different Ge nanostructures, namely, Ge QDs grown on Si(100) by molecular beam epitaxy (MBE), Ge nanocrystals embedded in SiO₂, and Ge nanoislands formed on Si(111) with a thin SiO₂ coverage. The results demonstrate that the local structure of Ge is different in the free cases and, when the same fabrication technique is used, is very sensitive to the growth conditions.

Original language	English
Pages (from-to)	1116-1119
Number of pages	4
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1460894
State	Published - May 2002

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abstract = "An overview is given on several XAFS studies of different Ge nanostructures, namely, Ge QDs grown on Si(100) by molecular beam epitaxy (MBE), Ge nanocrystals embedded in SiO2, and Ge nanoislands formed on Si(111) with a thin SiO2 coverage. The results demonstrate that the local structure of Ge is different in the free cases and, when the same fabrication technique is used, is very sensitive to the growth conditions.",

author = "Kolobov, {A. V.} and H. Oyanagi and K. Brunner and G. Abstreiter and Y. Maeda and Shklyaev, {A. A.} and S. Yamasaki and M. Ichikawa and K. Tanaka",

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AU - Kolobov, A. V.

AU - Oyanagi, H.

AU - Brunner, K.

AU - Abstreiter, G.

AU - Maeda, Y.

AU - Shklyaev, A. A.

AU - Yamasaki, S.

AU - Ichikawa, M.

AU - Tanaka, K.

PY - 2002/5

Y1 - 2002/5

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AB - An overview is given on several XAFS studies of different Ge nanostructures, namely, Ge QDs grown on Si(100) by molecular beam epitaxy (MBE), Ge nanocrystals embedded in SiO2, and Ge nanoislands formed on Si(111) with a thin SiO2 coverage. The results demonstrate that the local structure of Ge is different in the free cases and, when the same fabrication technique is used, is very sensitive to the growth conditions.

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JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 3

ER -

Effect of the interface on the local structure of Ge-Si nanostructures

Abstract

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