TY - JOUR
T1 - Effect of strain and tetragonal lattice distortions in doped perovskite manganites
AU - Lu, Yafeng
AU - Klein, J.
AU - Herbstritt, F.
AU - Philipp, J. B.
AU - Marx, A.
AU - Gross, R.
PY - 2006
Y1 - 2006
N2 - A series of high-quality, coherently strained [La23 (Ca or Ba) 13 MnO3 SrTiO3] xN superlattices has been prepared on (100) SrTiO3 and NdGaO3 substrates by laser molecular beam epitaxy. The manganite layers are biaxially strained due to lattice mismatch. A quadratic decrease of the metal-to-insulator transition temperature Tp with increasing biaxial distortion εbi2 both for tensile and compressive in-plane strain is found. For T> Tp, the resistivity versus temperature curves could be well described by the small polaron hopping model with the polaron binding energy increasing with increasing εbi2. Furthermore, the magnetoresistance of the manganite films was found to strongly increase with increasing εbi2 or decreasing Tp, respectively, following a universal behavior. An anomalous upturn of resistivity in the low-temperature regime (T<25 K) was detected, which may be attributed to enhanced Coulomb interaction of the charge carriers resulting from disorder due to the lattice distortion. Our analysis clearly demonstrates the importance of biaxial strain and Jahn-Teller-type lattice distortions for the physics of the doped manganites. It is shown that epitaxial coherency strain can be used to deliberately modify the materials properties.
AB - A series of high-quality, coherently strained [La23 (Ca or Ba) 13 MnO3 SrTiO3] xN superlattices has been prepared on (100) SrTiO3 and NdGaO3 substrates by laser molecular beam epitaxy. The manganite layers are biaxially strained due to lattice mismatch. A quadratic decrease of the metal-to-insulator transition temperature Tp with increasing biaxial distortion εbi2 both for tensile and compressive in-plane strain is found. For T> Tp, the resistivity versus temperature curves could be well described by the small polaron hopping model with the polaron binding energy increasing with increasing εbi2. Furthermore, the magnetoresistance of the manganite films was found to strongly increase with increasing εbi2 or decreasing Tp, respectively, following a universal behavior. An anomalous upturn of resistivity in the low-temperature regime (T<25 K) was detected, which may be attributed to enhanced Coulomb interaction of the charge carriers resulting from disorder due to the lattice distortion. Our analysis clearly demonstrates the importance of biaxial strain and Jahn-Teller-type lattice distortions for the physics of the doped manganites. It is shown that epitaxial coherency strain can be used to deliberately modify the materials properties.
UR - http://www.scopus.com/inward/record.url?scp=33646363611&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.73.184406
DO - 10.1103/PhysRevB.73.184406
M3 - Article
AN - SCOPUS:33646363611
SN - 1098-0121
VL - 73
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 18
M1 - 184406
ER -