Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

E. Rauwel; F. Ducroquet; P. Rauwel; M. G. Willinger; I. Matko; N. Pinna

doi:10.1116/1.3058743

Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

E. Rauwel, F. Ducroquet, P. Rauwel, M. G. Willinger, I. Matko, N. Pinna

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

Original language	English
Pages (from-to)	230-235
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3058743
State	Published - 2009
Externally published	Yes

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@article{88c7621a6a57464d8939f2cc3bf9b815,

title = "Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source",

abstract = "Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.",

author = "E. Rauwel and F. Ducroquet and P. Rauwel and Willinger, {M. G.} and I. Matko and N. Pinna",

note = "Funding Information: The authors would like to thank Dr. Bernard Chenevier director of LGMP-Minatec Grenoble for access to the JEOL 2010 TEM. Financial support from FCT Project Nos. PTDC/CTM/65667/2006 and SFRH/BPD/36941/2007, FAME Network of Excellence, and Marie Curie (MEIF-CT2006-041632) are acknowledged.",

year = "2009",

doi = "10.1116/1.3058743",

language = "English",

volume = "27",

pages = "230--235",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Rauwel, E, Ducroquet, F, Rauwel, P, Willinger, MG, Matko, I & Pinna, N 2009, 'Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 230-235. https://doi.org/10.1116/1.3058743

Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source. / Rauwel, E.; Ducroquet, F.; Rauwel, P. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 2009, p. 230-235.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

AU - Rauwel, E.

AU - Ducroquet, F.

AU - Rauwel, P.

AU - Willinger, M. G.

AU - Matko, I.

AU - Pinna, N.

N1 - Funding Information: The authors would like to thank Dr. Bernard Chenevier director of LGMP-Minatec Grenoble for access to the JEOL 2010 TEM. Financial support from FCT Project Nos. PTDC/CTM/65667/2006 and SFRH/BPD/36941/2007, FAME Network of Excellence, and Marie Curie (MEIF-CT2006-041632) are acknowledged.

PY - 2009

Y1 - 2009

N2 - Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

AB - Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

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U2 - 10.1116/1.3058743

DO - 10.1116/1.3058743

M3 - Article

AN - SCOPUS:59949103945

SN - 1071-1023

VL - 27

SP - 230

EP - 235

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

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